Title :
Material preparation and fabrication of graphene-based quantum hall resistance devices
Author :
Wang, Xueshen ; Li, Jinjin ; Zhong, Yuan ; Zhong, Qing ; Cao, Wenhui
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
Abstract :
We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO2/Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography, metallization, and oxygen plasma etching.
Keywords :
Raman spectra; chemical vapour deposition; electron beam lithography; graphene; metallisation; microfabrication; micromechanical devices; monolayers; quantum Hall effect; sputter etching; thin films; C; CPEM; CVD graphene films; Hall bar structures; MC preparation; SiO2-Si; chemical vapor deposition graphene films; e-beam lithography; graphene-based quantum Hall resistance device fabrication; graphene-based quantum Hall resistance device material preparation; micromechanical cleavage preparation; monolayer graphene films; oxygen plasma etching; spectroscopic Raman analysis; Fabrication; Films; Lithography; Plasmas; Resistance; Silicon; Substrates; Graphene; Quantum Hall Resistance Devices;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6251071
