Title :
Graphene Epitaxial growth on SiC(0001) for resistance standards
Author :
Real, Mariano A. ; Shen, Tian ; Jones, George R. ; Elmquist, Randolph E. ; Soons, Johannes A. ; Davydov, Albert V.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Epitaxial growth of graphene layers on 6H-SiC(0001) substrates are studied to improve the performance of graphene for metrological applications. A face-to-face (FTF) annealing method at 2000 °C in an Ar background atmosphere are used to inhibit the rates of SiC decomposition and Si sublimation and thus control the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.
Keywords :
annealing; electrical resistivity; epitaxial growth; epitaxial layers; graphene; surface morphology; C; FTF annealing method; SiC; background atmosphere; electrical resistance standards; face-to-face annealing method; graphene epitaxial growth; graphene layer development; sample surface morphology; sublimation; temperature 2000 degC; Argon; Epitaxial growth; Morphology; Silicon carbide; Standards; Surface morphology; Surface treatment; Electrical resistance standards; epitaxial growth; graphene; quantum Hall effect; surface morphology;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6251072
