Graphene Epitaxial growth on SiC(0001) for resistance standards

Author

Real, Mariano A. ; Shen, Tian ; Jones, George R. ; Elmquist, Randolph E. ; Soons, Johannes A. ; Davydov, Albert V.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2012

fDate

1-6 July 2012

Firstpage

600

Lastpage

601

Abstract

Epitaxial growth of graphene layers on 6H-SiC(0001) substrates are studied to improve the performance of graphene for metrological applications. A face-to-face (FTF) annealing method at 2000 °C in an Ar background atmosphere are used to inhibit the rates of SiC decomposition and Si sublimation and thus control the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.

Keywords

annealing; electrical resistivity; epitaxial growth; epitaxial layers; graphene; surface morphology; C; FTF annealing method; SiC; background atmosphere; electrical resistance standards; face-to-face annealing method; graphene epitaxial growth; graphene layer development; sample surface morphology; sublimation; temperature 2000 degC; Argon; Epitaxial growth; Morphology; Silicon carbide; Standards; Surface morphology; Surface treatment; Electrical resistance standards; epitaxial growth; graphene; quantum Hall effect; surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6251072

Filename

6251072