• DocumentCode
    2750826
  • Title

    Sensitivity optimization of epitaxial graphene based gas sensors

  • Author

    Novikov, S. ; Satrapinski, A. ; Lebedeva, N. ; Iisakka, I.

  • Author_Institution
    Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland
  • fYear
    2012
  • fDate
    1-6 July 2012
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    Epitaxial 4H-SiC graphene films were fabricated and tested for sensing ambient gases. Sensitivity response to nitrogen dioxide was optimized by varying operation temperature and humidity. At elevated temperature the response was found to be -10.0 % of the resistance change when the gas mixture with NO2 concentration of 10 parts per billion (10 ppb) was applied. Optimisation of sensitivity can be done by control and adjustment of the operation temperature and humidity level.
  • Keywords
    epitaxial layers; gas sensors; graphene; wide band gap semiconductors; C; SiC; ambient gas sensing; epitaxial graphene films; epitaxial graphene sensitivity optimization; gas mixture; gas sensors; humidity level; nitrogen dioxide; temperature level; Electrical resistance measurement; Epitaxial growth; Humidity; Resistance; Silicon carbide; Temperature measurement; Epitaxial graphene; gas sensor; graphene fabrication; measurement techniques; sensitivity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM), 2012 Conference on
  • Conference_Location
    Washington, DC
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4673-0439-9
  • Type

    conf

  • DOI
    10.1109/CPEM.2012.6251073
  • Filename
    6251073
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750826