DocumentCode :
2750826
Title :
Sensitivity optimization of epitaxial graphene based gas sensors
Author :
Novikov, S. ; Satrapinski, A. ; Lebedeva, N. ; Iisakka, I.
Author_Institution :
Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
602
Lastpage :
603
Abstract :
Epitaxial 4H-SiC graphene films were fabricated and tested for sensing ambient gases. Sensitivity response to nitrogen dioxide was optimized by varying operation temperature and humidity. At elevated temperature the response was found to be -10.0 % of the resistance change when the gas mixture with NO2 concentration of 10 parts per billion (10 ppb) was applied. Optimisation of sensitivity can be done by control and adjustment of the operation temperature and humidity level.
Keywords :
epitaxial layers; gas sensors; graphene; wide band gap semiconductors; C; SiC; ambient gas sensing; epitaxial graphene films; epitaxial graphene sensitivity optimization; gas mixture; gas sensors; humidity level; nitrogen dioxide; temperature level; Electrical resistance measurement; Epitaxial growth; Humidity; Resistance; Silicon carbide; Temperature measurement; Epitaxial graphene; gas sensor; graphene fabrication; measurement techniques; sensitivity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
ISSN :
0589-1485
Print_ISBN :
978-1-4673-0439-9
Type :
conf
DOI :
10.1109/CPEM.2012.6251073
Filename :
6251073
Link To Document :
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