• DocumentCode
    2750878
  • Title

    Manufacturing of large area high mobility AM-TFT backplanes using IGZO rotary sputtering targets

  • Author

    Scheer, Evelyn ; Graw, Oliver ; Hosokawa, Aki ; Ye, Yan ; Yim, Dong-Kil ; Gaur, Anshu ; Lim, Rodney ; You, Harvey

  • Author_Institution
    Appl. Mater. GmbH & Co. KG, Alzenau, Germany
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    626
  • Lastpage
    627
  • Abstract
    IGZO deposition by rotary sputtering targets serves the needs for high-performance, low-manufacturing-cost TFTs. Both, manufacturability of rotary targets and performance of produced TFTs confirm the feasibility and underline the advantages of using rotary technology.
  • Keywords
    chromium; elemental semiconductors; gallium compounds; indium compounds; silicon; silicon compounds; sputter deposition; thin film transistors; zinc compounds; IGZO; SiO2-Si3N4-InO-GaO-ZnO-SiO2-Cr-Si; high performance; large area high mobility AM-TFT backplanes; low manufacturing cost; manufacturability; rotary sputtering targets; Logic gates; Production; Sputtering; Substrates; Thin film transistors; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110704
  • Filename
    6110704
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750878