DocumentCode :
2750878
Title :
Manufacturing of large area high mobility AM-TFT backplanes using IGZO rotary sputtering targets
Author :
Scheer, Evelyn ; Graw, Oliver ; Hosokawa, Aki ; Ye, Yan ; Yim, Dong-Kil ; Gaur, Anshu ; Lim, Rodney ; You, Harvey
Author_Institution :
Appl. Mater. GmbH & Co. KG, Alzenau, Germany
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
626
Lastpage :
627
Abstract :
IGZO deposition by rotary sputtering targets serves the needs for high-performance, low-manufacturing-cost TFTs. Both, manufacturability of rotary targets and performance of produced TFTs confirm the feasibility and underline the advantages of using rotary technology.
Keywords :
chromium; elemental semiconductors; gallium compounds; indium compounds; silicon; silicon compounds; sputter deposition; thin film transistors; zinc compounds; IGZO; SiO2-Si3N4-InO-GaO-ZnO-SiO2-Cr-Si; high performance; large area high mobility AM-TFT backplanes; low manufacturing cost; manufacturability; rotary sputtering targets; Logic gates; Production; Sputtering; Substrates; Thin film transistors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110704
Filename :
6110704
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2750878
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