DocumentCode
2750906
Title
Thermal modeling and experimental techniques for microwave bipolar devices
Author
Negus, K.J. ; Franklin, R.W. ; Yovanovich, M.M.
Author_Institution
Avantek Inc., Newark, CA, USA
fYear
1989
fDate
7-9 Feb. 1989
Firstpage
63
Lastpage
72
Abstract
Many thermal issues facing the microwave bipolar industry are discussed, and the application of experimental and modeling techniques is demonstrated for real microwave devices. The liquid crystal transition method of thermal measurement is shown to be useful for modern bipolar devices because the method can determine temperatures with excellent spatial resolution. Infrared detection, however, generally does not have the necessary resolution for modern small-geometry devices. An experimental technique for determining thermal resistance from device terminal characteristics is shown to be adequate for some applications and packages. Thermal analysis through the use of an exact solution to a three-dimensional model of the semiconductor die is also presented. The modeling technique compares extremely well with detailed measurements by liquid crystal transition on microwave bipolar devices. The application of experimental and analytical thermal characterization is discussed and shown to be important for problems such as device optimization and reliability predictions.<>
Keywords
bipolar transistors; circuit analysis computing; liquid crystal devices; optimisation; reliability; semiconductor device models; solid-state microwave devices; temperature measurement; thermal analysis; thermal resistance; 3D model; liquid crystal transition; microwave bipolar devices; optimization; reliability; semiconductor device models; semiconductor die; terminal characteristics; thermal analysis; thermal measurement; thermal resistance; three-dimensional model; Electrical resistance measurement; Infrared detectors; Liquid crystal devices; Microwave devices; Microwave measurements; Microwave theory and techniques; Semiconductor device packaging; Spatial resolution; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/STHERM.1989.76068
Filename
76068
Link To Document