• DocumentCode
    2751077
  • Title

    Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser

  • Author

    Sato, Takashi ; Shirao, Mizuki ; Takino, Yuta ; Sato, Noriaki ; Nishiyama, Nobuhiko ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    648
  • Lastpage
    649
  • Abstract
    A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; AlGaInAs-InP; current 130 mA; lasing operation; npn-AlGaInAs/InP transistor laser; pulsed operation; temperature 293 K to 298 K; threshold emitter current; wavelength 1.3 mum; Cavity resonators; Cleaning; Indium phosphide; Lasers; Modulation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110715
  • Filename
    6110715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2751077