Title :
Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser
Author :
Sato, Takashi ; Shirao, Mizuki ; Takino, Yuta ; Sato, Noriaki ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; AlGaInAs-InP; current 130 mA; lasing operation; npn-AlGaInAs/InP transistor laser; pulsed operation; temperature 293 K to 298 K; threshold emitter current; wavelength 1.3 mum; Cavity resonators; Cleaning; Indium phosphide; Lasers; Modulation; Transistors;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110715
