Flexible ISFET Biosensor Using IGZO Metal Oxide TFTs and an ITO Sensing Layer

Author

Smith, Joseph T. ; Shah, Sahil S. ; Goryll, Michael ; Stowell, John R. ; Allee, D.R.

Author_Institution

Flexible Display Center, Arizona State Univ., Tempe, AZ, USA

Volume

14

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

937

Lastpage

938

Abstract

This letter presents the fabrication details and measured performance of a prototype flexible extended-gate ion-sensitive field effect transistor (ISFET) biosensor, manufactured using a metal oxide indium-gallium-zinc oxide thin film transistor and an indium-tin oxide sensing layer on a 125- μm thick flexible plastic substrate. ISFET drain current was shown to respond correctly to the pH buffer concentration with repeatable pH sensitivity observed over multiple cycles. These results demonstrate the initial viability of directly extending flexible plastic substrate organic light emitting diode display technology to the production of low-cost, plastic ISFET biosensors.

Keywords

II-VI semiconductors; biosensors; gallium compounds; indium compounds; ion sensitive field effect transistors; light emitting diodes; organic compounds; pH; thin film transistors; tin compounds; wide band gap semiconductors; IGZO metal oxide TFT; ITO; ITO sensing layer; InGaZnO; drain current; flexible ISFET biosensor; flexible plastic substrate; indium-tin oxide sensing layer; metal oxide indium-gallium-zinc oxide thin film transistor; organic light emitting diode display technology; pH buffer concentration; pH sensitivity; plastic ISFET biosensors; prototype flexible extended-gate ion-sensitive field effect transistor biosensor; size 125 mum; Biosensors; Current measurement; Indium tin oxide; Logic gates; Plastics; Thin film transistors; Biosensor; IGZO; ISFET; TFT; flexible electronics;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2013.2295057

Filename

6684572