DocumentCode
2751368
Title
Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers
Author
Xu, LiFang ; Patel, D. ; Menoni, Carmen S. ; Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
682
Lastpage
683
Abstract
Carrier escape times in InGaAsN and InGaAs quantum wells lasers were measured by pump-probe transmission methods, and the findings showed good agreement with thermionic carrier escape model.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; InGaAs; InGaAs quantum well lasers; InGaAsN; InGaAsN quantum well lasers; capture process; carrier escape times; pump-probe transmission; thermionic carrier escape; Charge carrier density; Indium gallium arsenide; Laser excitation; Laser modes; Measurement by laser beam; Probes; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110733
Filename
6110733
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