Model of intra and extracavity photodetection for planar resonant cavity light emitting diodes

Author

Lott, J.A. ; Noble, M.J.

Author_Institution

Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

585

Lastpage

588

Abstract

A classical model of spontaneous emission in resonant cavity light emitting diodes is developed. The model is based on a plane wave expansion of a randomly distributed ensemble of noninteracting optical dipole emitter pairs placed within a planar microcavity. The model accounts for losses due to leaky guided modes and intracavity absorption. Given an arbitrary device structure, the model predicts the total power emitted, the radiation pattern, and the relative magnitude of photocurrent generated in an intra or extracavity photodetector. Selected modeling results for an example device emitting at 650 nm are included

Keywords

cavity resonators; light emitting diodes; optical losses; photodetectors; quantum well devices; semiconductor device models; device structure; extracavity photodetection; intracavity absorption; intracavity photodetection; leaky guided modes; losses; model; noninteracting optical dipole emitter pairs; photocurrent; photodetector; planar microcavity; planar resonant cavity light emitting diodes; plane wave expansion; radiation pattern; randomly distributed ensemble; spontaneous emission; total power; Absorption; Light emitting diodes; Microcavities; Optical losses; Photoconductivity; Power generation; Predictive models; Resonance; Spontaneous emission; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711745

Filename

711745