DocumentCode
2751729
Title
Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure
Author
Huber, J.L. ; Reed, M.A. ; Kramer, G. ; Goronkin, H.
Author_Institution
Yale Univ., New Haven, CT, USA
fYear
1997
fDate
8-11 Sep 1997
Firstpage
593
Lastpage
596
Abstract
The magnetotunneling characteristics of a p-type well InAs/AlSb/GaSb resonant interband tunneling structure are investigated. Experimental results indicate that tunneling occurs through multiple subbands, including both light-hole and heavy-hole like subbands. The data can be used to plot out critical points on the GaSb subband structure
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; interface states; resonant tunnelling; semiconductor quantum wells; GaSb subband structure; InAs-AlSb-GaSb; InAs/AlSb/GaSb interband tunneling structure; critical points; heavy-hole like subbands; light-hole like subbands; magnetotunneling characteristics; multiple subbands; p-type well; resonant interband tunneling; Carrier confinement; Charge carrier processes; Diodes; Electrons; Magnetic field measurement; Magnetic resonance; Magnetic tunneling; Magnetosphere; Optical coupling; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711747
Filename
711747
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