Title :
Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure
Author :
Huber, J.L. ; Reed, M.A. ; Kramer, G. ; Goronkin, H.
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
The magnetotunneling characteristics of a p-type well InAs/AlSb/GaSb resonant interband tunneling structure are investigated. Experimental results indicate that tunneling occurs through multiple subbands, including both light-hole and heavy-hole like subbands. The data can be used to plot out critical points on the GaSb subband structure
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; interface states; resonant tunnelling; semiconductor quantum wells; GaSb subband structure; InAs-AlSb-GaSb; InAs/AlSb/GaSb interband tunneling structure; critical points; heavy-hole like subbands; light-hole like subbands; magnetotunneling characteristics; multiple subbands; p-type well; resonant interband tunneling; Carrier confinement; Charge carrier processes; Diodes; Electrons; Magnetic field measurement; Magnetic resonance; Magnetic tunneling; Magnetosphere; Optical coupling; Resonant tunneling devices;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711747
