Title :
Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors
Author :
Kolagunta, V.R. ; Janes, D.B. ; Melloch, M.R. ; Youtsey, C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper we present gating effects in double well resonant tunneling heterostructures with sub-micron minimum feature widths. Resonant tunneling through one dimensional states in the wells is observed as the device approaches pinch-off at temperatures as high as 77 K. This is the first clear demonstration of resonant tunneling through such laterally confined one-dimensional sub-bands at 77 K
Keywords :
interface states; resonant tunnelling transistors; 77 K; AlGaAs; GaAs; double-well sidewall gated resonant tunneling transistors; gating effects; laterally confined one-dimensional sub-bands; one dimensional states; pinch-off; quasi one-dimensional confinement; resonant tunneling heterostructures; sub-micron minimum feature widths; Diodes; Energy states; Frequency; Gallium arsenide; Logic devices; Oscillators; Postal services; Resonant tunneling devices; Switching circuits; Temperature;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711748
