Title :
Microwave noise properties for resonant tunneling transistors (RTTs)
Author :
Ando, Yuji ; Contrata, Walter ; Maruhashi, Kenichi ; Miyamoto, Hironobu
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Seiran, Japan
Abstract :
We propose and demonstrate a low noise amplifier utilizing the negative input conductance of resonant-tunneling transistors (RTTs). The fabricated RTTs, which integrate a resonant-tunneling diode (RTD) into the source of a heterojunction FET (HJFET), exhibited a negative input conductance at low frequencies (⩽10 GHz). When the gate bias is close to the resonance peak not only Fmin but also Rn increases at low frequencies. Also, Fmin shows a sharp dip at the valley current these behaviors are explained by shot noise generation at the RTD. Theoretical results suggest that reducing the valley current as well as reducing the series resistance would realize RTT noise performance superior to HJFETs
Keywords :
circuit noise; equivalent circuits; microwave amplifiers; microwave field effect transistors; negative resistance devices; resonant tunnelling transistors; semiconductor device noise; shot noise; 10 GHz; Al0.22Ga0.78As-In0.2Ga0.8 As-GaAs; GaAs; HJFET; gate bias; heterojunction FET; low frequencies; low noise amplifier; microwave noise properties; negative input conductance; resonant tunneling transistors; resonant-tunneling diode; series resistance; shot noise generation; valley current; van der Ziel amplifier; Diodes; Frequency; Heterojunctions; Low-frequency noise; Low-noise amplifiers; Microwave FETs; Microwave transistors; Noise generators; Resonance; Resonant tunneling devices;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711751
