• DocumentCode
    2751833
  • Title

    Resonant tunneling in disordered materials such as SiO2/Si/SiO2

  • Author

    Lake, R. ; Brar, B. ; Wilk, G.D. ; Seabaugh, A. ; Klimeck, G.

  • Author_Institution
    TI Syst., Raytheon Co., Dallas, TX, USA
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    617
  • Lastpage
    620
  • Abstract
    We have analyzed the effect of disorder in both the well and barriers of a resonant tunneling diode (RTD). If the disorder is limited solely to the barriers, a good peak-to-valley ratio (PVR) is expected. We describe a general guideline relating the PVR to the bulk mobility and effective mass of the well material of an RTD. We compare the effects of correlated versus uncorrelated disorder on the valley current. We discuss why interband tunnel devices such its the Esaki diode are more robust than RTDs in the presence of disorder
  • Keywords
    carrier mobility; effective mass; resonant tunnelling diodes; semiconductor-insulator boundaries; silicon; silicon compounds; Esaki diode; RTD; SiO2-Si-SiO2; SiO2/Si/SiO2; bulk mobility; disorder effect; disordered materials; effective mass; interband tunnel devices; peak-to-valley ratio; resonant tunneling diode; valley current; Amorphous materials; Diodes; Effective mass; Guidelines; Instruments; Lakes; Quantization; Resonant tunneling devices; Robustness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711753
  • Filename
    711753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2751833