Title :
Resonant tunneling in disordered materials such as SiO2/Si/SiO2
Author :
Lake, R. ; Brar, B. ; Wilk, G.D. ; Seabaugh, A. ; Klimeck, G.
Author_Institution :
TI Syst., Raytheon Co., Dallas, TX, USA
Abstract :
We have analyzed the effect of disorder in both the well and barriers of a resonant tunneling diode (RTD). If the disorder is limited solely to the barriers, a good peak-to-valley ratio (PVR) is expected. We describe a general guideline relating the PVR to the bulk mobility and effective mass of the well material of an RTD. We compare the effects of correlated versus uncorrelated disorder on the valley current. We discuss why interband tunnel devices such its the Esaki diode are more robust than RTDs in the presence of disorder
Keywords :
carrier mobility; effective mass; resonant tunnelling diodes; semiconductor-insulator boundaries; silicon; silicon compounds; Esaki diode; RTD; SiO2-Si-SiO2; SiO2/Si/SiO2; bulk mobility; disorder effect; disordered materials; effective mass; interband tunnel devices; peak-to-valley ratio; resonant tunneling diode; valley current; Amorphous materials; Diodes; Effective mass; Guidelines; Instruments; Lakes; Quantization; Resonant tunneling devices; Robustness; Voltage;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711753
