Title :
InGaAlAs/InAlAs multi quantum well substrate removed electro-optic modulators
Author :
Dogru, Selim ; JaeHyuk Shin ; Dagli, Nadir
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
Substrate removed Mach-Zehnder electro-optic modulators with InGaAlAs/InAlAs MQW cores are reported. Devices have 0.36 V-cm drive voltage length product and 2 pF/cm capacitance making them suitable for very low voltage and wide bandwidth operation.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; p-i-n diodes; quantum well devices; InGaAlAs-InAlAs; MQW cores; drive voltage length product; multiquantum well; p-i-n diodes; substrate removed Mach-Zehnder electrooptic modulators; very low voltage operation; wide bandwidth operation; Capacitance; Electrodes; Electrooptic modulators; Electrooptical waveguides; Substrates;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110762
