DocumentCode
2751892
Title
InGaAlAs/InAlAs multi quantum well substrate removed electro-optic modulators
Author
Dogru, Selim ; JaeHyuk Shin ; Dagli, Nadir
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
739
Lastpage
740
Abstract
Substrate removed Mach-Zehnder electro-optic modulators with InGaAlAs/InAlAs MQW cores are reported. Devices have 0.36 V-cm drive voltage length product and 2 pF/cm capacitance making them suitable for very low voltage and wide bandwidth operation.
Keywords
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; p-i-n diodes; quantum well devices; InGaAlAs-InAlAs; MQW cores; drive voltage length product; multiquantum well; p-i-n diodes; substrate removed Mach-Zehnder electrooptic modulators; very low voltage operation; wide bandwidth operation; Capacitance; Electrodes; Electrooptic modulators; Electrooptical waveguides; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110762
Filename
6110762
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