Engineered substrates: The foundation to meet current and future RF requirements

Author

Le Meil, Jean-Marc ; Aspar, Bernard ; Desbonnets, Eric ; Raskin, Jean-Pierre

Author_Institution

Soitec, Bernin, France

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

4

Abstract

The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec and UCL explain the value of using RF-SOI substrates and more especially the new generation of Soitec widely adopted eSI™ (enhanced Signal Integrity) substrate to achieve the RF IC performance requested to address the LTE Advanced smart phone market.

Keywords

Long Term Evolution; radiofrequency integrated circuits; silicon-on-insulator; LTE; RF-SOI substrates; radio-frequency IC; wireless data bandwidth; Conductivity; Noise; Performance evaluation; Radio frequency; Silicon; Silicon-on-insulator; Substrates; LTE; Silicon-on-Insulator (SOI); high frequency; high resistivity Si substrate; trap-rich layer; wireless applications;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117546

Filename

7117546