Title :
Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure
Author :
Chang, Y.F. ; Fowler, B. ; Zhou, F. ; Byun, K. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics and resistive switching mechanisms have been investigated in TiW/SiOx/TiW structure. The cross-bar (metal-insulator-metal) MIM structures have been examined and optimized, and SiOx composition has been varied. Current transport behaviors of multilevel states, switching layer polarization, proposed defect transformations and energy band diagrams of SET and RESET processes have been modeled to provide insights for optimization to obtain high yield and auto-forming capability.
Keywords :
MIM structures; polarisation; resistive RAM; silicon compounds; titanium compounds; tungsten compounds; RESET process; SET process; SiOx; TiW-SiOx-TiW; autoforming capability; cross-bar MIM structure; current transport behavior; defect transformation; energy band diagram; intrinsic unipolar silicon oxide-based ReRAM characteristic; metal-insulator-metal structure; multilevel state; resistive switching mechanism; resistive-random access memory; switching layer polarization; Process control; Resistance; Switches; Temperature distribution; Temperature measurement; Voltage control; ReRAM; SiOx; Unipolar; current transport;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117558
