Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure

Author

Chang, Y.F. ; Fowler, B. ; Zhou, F. ; Byun, K. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Intrinsic unipolar SiO_x-based Resistive-RAM (ReRAM) characteristics and resistive switching mechanisms have been investigated in TiW/SiO_x/TiW structure. The cross-bar (metal-insulator-metal) MIM structures have been examined and optimized, and SiO_x composition has been varied. Current transport behaviors of multilevel states, switching layer polarization, proposed defect transformations and energy band diagrams of SET and RESET processes have been modeled to provide insights for optimization to obtain high yield and auto-forming capability.

Keywords

MIM structures; polarisation; resistive RAM; silicon compounds; titanium compounds; tungsten compounds; RESET process; SET process; SiO_x; TiW-SiO_x-TiW; autoforming capability; cross-bar MIM structure; current transport behavior; defect transformation; energy band diagram; intrinsic unipolar silicon oxide-based ReRAM characteristic; metal-insulator-metal structure; multilevel state; resistive switching mechanism; resistive-random access memory; switching layer polarization; Process control; Resistance; Switches; Temperature distribution; Temperature measurement; Voltage control; ReRAM; SiOx; Unipolar; current transport;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117558

Filename

7117558