Title :
Monte Carlo estimation of excess noise factor in thin p+-i-n+ avalanche photodiodes
Author :
Ong, D.S. ; Li, K.F. ; Rees, G.J. ; Dunn, G.M. ; David, J.P.R. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
A Monte Carlo model has been used to estimate the excess noise factor in thin p+-i-n+ GaAs avalanche photodiodes. The model predicts a decrease in excess noise factor as the multiplication length decreases from 1.0 to 0.05 μm in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behaviour in short devices is explained from the ionization path length distribution
Keywords :
Monte Carlo methods; avalanche photodiodes; p-i-n photodiodes; semiconductor device models; semiconductor device noise; 1.0 to 0.05 mum; Monte Carlo estimation; Monte Carlo model; electron initiated multiplication; excess noise factor; feedback; hole ionization; ionization path length distribution; low noise behaviour; multiplication length; short devices; thin p+-i-n+ avalanche photodiodes; Avalanche photodiodes; Charge carrier processes; Feedback; Gallium arsenide; Ionization; Length measurement; Monte Carlo methods; Noise measurement; Noise reduction; Predictive models;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711756
