Title :
Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation
Author :
Zhao, Y.D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H.T. ; Chen, B. ; Ma, W.J. ; Zhang, F.F. ; Gao, B. ; Liu, X.Y. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access memory (RRAM) including both the generation & recombination effect of oxygen vacancy defects with oxygen ions and the phase change effect between Ta2O5 and TaO2. Using the developed simulation tool, the resistive switching characteristics of the bi-layered Ta2O5/TaOx RRAM are investigated. The typical self-compliance behavior measured in the bi-layered Ta2O5/TaOx RRAM is reproduced by considering the interaction between Ta2O5 and TaOx, indicating that TaOx layer plays a critical role to the self-compliance behavior.
Keywords :
Monte Carlo methods; oxygen; resistive RAM; tantalum compounds; Monte-Carlo simulation; RRAM; TaOx; oxygen ion; oxygen vacancy defect; phase change effect; recombination effect; resistive random-access memory; resistive switching characteristic;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117560
