• DocumentCode
    2752295
  • Title

    Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation

  • Author

    Zhao, Y.D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H.T. ; Chen, B. ; Ma, W.J. ; Zhang, F.F. ; Gao, B. ; Liu, X.Y. ; Kang, J.F.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access memory (RRAM) including both the generation & recombination effect of oxygen vacancy defects with oxygen ions and the phase change effect between Ta2O5 and TaO2. Using the developed simulation tool, the resistive switching characteristics of the bi-layered Ta2O5/TaOx RRAM are investigated. The typical self-compliance behavior measured in the bi-layered Ta2O5/TaOx RRAM is reproduced by considering the interaction between Ta2O5 and TaOx, indicating that TaOx layer plays a critical role to the self-compliance behavior.
  • Keywords
    Monte Carlo methods; oxygen; resistive RAM; tantalum compounds; Monte-Carlo simulation; RRAM; TaOx; oxygen ion; oxygen vacancy defect; phase change effect; recombination effect; resistive random-access memory; resistive switching characteristic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2015.7117560
  • Filename
    7117560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2752295