DocumentCode :
2752301
Title :
6.3W InGaN laser diode array with highly efficient wide-striped emitters
Author :
Samonji, Katsuya ; Yoshida, Shinji ; Hagino, Hiroyuki ; Yamanaka, Kazuhiko ; Takigawa, Shinichi
Author_Institution :
Semicond. Device Res. Center, Panasonic Corp., Kyoto, Japan
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
507
Lastpage :
508
Abstract :
A multi-striped InGaN-based laser diode (LD) array is demonstrated at a high power of 6.3W under continuous wave operation. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking an advantage of highly efficient emitters.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor laser arrays; InGaN; continuous wave operation; multistriped laser diode array; power 6.3 W; thermally optimized layout design; wide-striped emitters; Arrays; Diode lasers; Layout; Optical device fabrication; Stimulated emission; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110783
Filename :
6110783
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2752301
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