DocumentCode
2752301
Title
6.3W InGaN laser diode array with highly efficient wide-striped emitters
Author
Samonji, Katsuya ; Yoshida, Shinji ; Hagino, Hiroyuki ; Yamanaka, Kazuhiko ; Takigawa, Shinichi
Author_Institution
Semicond. Device Res. Center, Panasonic Corp., Kyoto, Japan
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
507
Lastpage
508
Abstract
A multi-striped InGaN-based laser diode (LD) array is demonstrated at a high power of 6.3W under continuous wave operation. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking an advantage of highly efficient emitters.
Keywords
III-V semiconductors; gallium compounds; indium compounds; semiconductor laser arrays; InGaN; continuous wave operation; multistriped laser diode array; power 6.3 W; thermally optimized layout design; wide-striped emitters; Arrays; Diode lasers; Layout; Optical device fabrication; Stimulated emission; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110783
Filename
6110783
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