Title :
Ultrathin InAs-channel MOSFETs on Si substrates
Author :
Cheng-Ying Huang ; Xinyu Bao ; Zhiyuan Ye ; Sanghoon Lee ; Hanwei Chiang ; Haoran Li ; Chobpattana, Varistha ; Thibeault, Brian ; Mitchell, William ; Stemmer, Susanne ; Gossard, Arthur ; Sanchez, Errol ; Rodwell, Mark
Author_Institution :
Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (Lg) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm Lg show high transconductance, ~2.0 mS/μm at VDS=0.5V.
Keywords :
CVD coatings; III-V semiconductors; MOSFET; indium compounds; molecular beam epitaxial growth; InAlAs; InAs-Si; MOCVD; metal organic chemical vapor deposition; molecular beam epitaxy; planar MOSFET; ultrathin channel MOSFET; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET; Silicon; Substrates;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117566
