• DocumentCode
    2752412
  • Title

    Ultrathin InAs-channel MOSFETs on Si substrates

  • Author

    Cheng-Ying Huang ; Xinyu Bao ; Zhiyuan Ye ; Sanghoon Lee ; Hanwei Chiang ; Haoran Li ; Chobpattana, Varistha ; Thibeault, Brian ; Mitchell, William ; Stemmer, Susanne ; Gossard, Arthur ; Sanchez, Errol ; Rodwell, Mark

  • Author_Institution
    Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (Lg) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm Lg show high transconductance, ~2.0 mS/μm at VDS=0.5V.
  • Keywords
    CVD coatings; III-V semiconductors; MOSFET; indium compounds; molecular beam epitaxial growth; InAlAs; InAs-Si; MOCVD; metal organic chemical vapor deposition; molecular beam epitaxy; planar MOSFET; ultrathin channel MOSFET; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2015.7117566
  • Filename
    7117566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2752412