DocumentCode
2752423
Title
Carrier concentration dependent resonance frequency shift in metamaterial loaded semiconductor
Author
Myoga, Seiji ; Amemiya, Tomohiro ; Ishikawa, Atsushi ; Nishiyama, Nobuhiko ; Tanaka, Takuo ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
785
Lastpage
786
Abstract
We experimentally observed that the resonant frequency of the split ring resonator consisting of metal/semiconductor metamaterial varies with the carrier concentrations of the semiconductor layer.
Keywords
metamaterials; optical resonators; carrier concentration dependent resonance frequency shift; metal metamaterial; metamaterial loaded semiconductor; semiconductor layer; semiconductor metamaterial; split ring resonator; Arrays; Metamaterials; Optical ring resonators; Permittivity; Resonant frequency; Semiconductor device measurement; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110790
Filename
6110790
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