Numerical model of a 0.2 μm AlGaAs/GaAs HEMT including electromagnetic effects

Author

Cidronali, A. ; Leuzzi, G. ; Collodi, G. ; Manes, G.

Author_Institution

Dept. of Electron. Eng., Florence Univ., Italy

fYear

1997

fDate

8-11 Sep 1997

Firstpage

635

Lastpage

638

Abstract

The paper presents an efficient approach to evaluate the performance of electron devices under non stationary operation through an accurate mixed physics-electromagnetic based model. The analysis couples a three-dimensional (3-D) time domain solution of Maxwell´s equation to the electron device model. The electron device model is based on a simplified version of the first three moments of the Boltzmann transport equation (BTE). By means the proposed physics based model a conventional 0.2 μm HEMT has been simulated. The numerical results show the effect of the interaction between electron and fields on the behavior of high frequency FETs

Keywords

Boltzmann equation; III-V semiconductors; Maxwell equations; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; time-domain analysis; 0.2 mum; AlGaAs-GaAs; AlGaAs/GaAs HEMT; Boltzmann transport equation; Maxwell equation; accurate mixed physics-electromagnetic based model; electromagnetic effects; electron device model; electron devices; high frequency FETs; nonstationary operation; numerical model; three-dimensional time domain solution; Boltzmann equation; Electron devices; FETs; Frequency; Gallium arsenide; HEMTs; Maxwell equations; Numerical models; Physics; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711757

Filename

711757