DocumentCode :
275257
Title :
Voltage drops effects in bipolar transistor PWM inverters
Author :
Boglietti, A. ; Ferraris, P. ; Lazzari, M. ; Profumo, F.F. ; Villata, F.
Author_Institution :
Politecnico di Torino, Italy
fYear :
1990
fDate :
17-19 Jul 1990
Firstpage :
104
Lastpage :
109
Abstract :
Pulse width modulation (PWM) control applied to bipolar junction transistor (BJT) voltage source inverter (VSI) is the most used solution for adjustable speed drives in the power range up to 100 kW. Open loop control to make the V/f rated constant is generally used. However, the inverter output voltage is not purely sinusoidal and the distortion is due to a bunch of power devices features: lock-out time, power transistors and diodes forward voltage drop, transistor storage time and BJTs and diodes differential resistances. The authors present a complete inverter model and the inverter output voltage is calculated keeping into account the power devices nonidealities mentioned above. Simulation results for different carrier frequencies, inverter output frequencies, load characteristics and modulation index are presented. Finally, some experimental results for validating the method proposed are shown
Keywords :
bipolar transistors; invertors; power transistors; pulse width modulation; 100 kW; adjustable speed drives; bipolar junction transistor; bipolar transistor PWM inverters; differential resistances; diodes forward voltage drop; load characteristics; modulation index; open loop control; transistor storage time; voltage source inverter;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Variable-Speed Drives, 1991., Fourth International Conference on
Conference_Location :
London
Type :
conf
Filename :
114623
Link To Document :
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