A novel circuit for the evaluation of thermal impedance characteristics of MOS integrated circuits

Author

Tarter, Thomas S.

Author_Institution

Adv. Micro Devices, Sunnyvale, CA, USA

fYear

1989

fDate

7-9 Feb. 1989

Firstpage

131

Lastpage

135

Abstract

The MOS thermal impedance test circuit (MOST) is a simple device for evaluating thermal impedance values using the electrical test method. Results are presented for bipolar. CMOS, and NMOS devices. The data presented show that the use of the MOST circuit is a viable method for procuring average thermal impedance values. It provides a low-cost alternative to integrated systems and can be duplicated for multiple test setups. In a large-scale test area, many of the circuits can be used for simultaneous testing, dedicating one (or more) circuit to each family of devices to be evaluated. In the manner, the measurement delay need only be set once for the initial lot and checked periodically for utmost accuracy.<>

Keywords

CMOS integrated circuits; MOS integrated circuits; bipolar integrated circuits; characteristics measurement; field effect integrated circuits; integrated circuit testing; thermal resistance measurement; CMOS; MOS integrated circuits; NMOS; electrical test; large-scale test; measurement delay; simultaneous testing; thermal impedance characteristics; thermal impedance test circuit; Circuit testing; Clocks; Heating; Impedance; Logic testing; MOS devices; MOS integrated circuits; Temperature sensors; Voltage; Voltmeters;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/STHERM.1989.76078

Filename

76078