A DC technique for determining GaAs MESFET thermal resistance

Author

Estreich, Donald B.

Author_Institution

Hewlett-Packard Co., Santa Rosa, CA, USA

fYear

1989

fDate

7-9 Feb. 1989

Firstpage

136

Lastpage

139

Abstract

A novel DC electrical method (DCEM) is described for measuring the thermal resistance of GaAs MESFETs using the temperature dependence of the gate metal resistivity. The method requires a DC current to be passed (end-to-end) through the gate stripe to monitor the average temperature of the channel. The DCEM can measure the average thermal resistance over the entire operating range of a Schottky-gate MESFET using only DC measuring instruments. An example is given showing the thermal resistance of an ion-implanted 0.5- mu m GaAs MESFET as a function of DC power dissipation.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; thermal resistance measurement; 0.5 micron; DC electrical method; DC power dissipation; GaAs; MESFET; Schottky gate; gate metal resistivity; measurement; temperature dependence; thermal resistance; Conductivity; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/STHERM.1989.76079

Filename

76079