Application of linearization modeling technology for nonlinear RF power devices

Based on nonlinear large-signal scattering functions theory and harmonic superposition principle, we describe a novel method to linearize the scattering function in a form that is similar with classical scatter parameter when considering the influence of the conjugate term of incident signal. Moreover, in case of weakly nonlinear device, combining phase normalization and linearization technique, we analyze the expression of linearized scattering function in polar coordinates and predict the characters of the track of reflected waves. Further examination of these characters, we prove that they are derived from the emergence of conjugate term. To testify the linearization model, we apply this linearization model technique for modeling high electron mobility transistor (HEMT) on large signal network analyzer platform. Finally, after contrasting the linearization model with classical scatter parameter model for the measurements data, we conclude with the efficiency of the model for modeling RF devices.