DocumentCode
2753039
Title
A high-speed IDDQ sensor implementation
Author
Antonioli, Yann ; Inufushi, Tsuneo ; Nishikawa, Shigeki ; Kinoshita, Kozo
Author_Institution
Test Eng. Center, Sharp Corp., Nara, Japan
fYear
2000
fDate
2000
Firstpage
356
Lastpage
361
Abstract
This paper presents an effective IDDQ sensor design implemented using a 0.35 μm process. A straightforward feedback scheme minimizes the effect of process variations. Independent structures permit one to monitor the basic characteristics of the IDDQ sensor, i.e., resolution and speed, and to carry out a 20k-gate floppy-disk controller IDDQ test separately. Simulation and test results show accuracy better than ±10 μA at 50 MHz in a 1 mA IDDQ measurement range
Keywords
CMOS digital integrated circuits; circuit feedback; electric current measurement; electric sensing devices; integrated circuit testing; 0.35 micron; 50 MHz; BICS; built-in sensor; current sensor; feedback scheme; floppy-disk controller IDDQ test; high-speed IDDQ sensor implementation; submicron CMOS process; Circuit faults; Circuit testing; Clocks; Monitoring; Power supplies; Pulse measurements; Sensor phenomena and characterization; Signal resolution; Velocity measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium, 2000. (ATS 2000). Proceedings of the Ninth Asian
Conference_Location
Taipei
ISSN
1081-7735
Print_ISBN
0-7695-0887-1
Type
conf
DOI
10.1109/ATS.2000.893649
Filename
893649
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