DocumentCode :
275306
Title :
Improving GTO thyristor reliability by use of linear MOSFET amplifiers and controlled avalanching in gate drive circuits
Author :
Johnson, C.M. ; Palmer, P.R.
Author_Institution :
Cambridge Univ., UK
fYear :
1990
fDate :
17-19 Jul 1990
Firstpage :
417
Lastpage :
423
Abstract :
The controlled linear amplifier described has been shown to provide safe and reliable gate turn-off waveforms which may be easily adapted to the circuit conditions. The low impedance coaxial gate connections enhance the performance of the circuit and allow a greater degree of control than is possible using standard wired arrangements. For large GTOs, where the turn-off current may be in excess of 3000 A, both the coaxial connections and a controlled turn-off circuit are desirable for reliable operation. Device reliability and uniform turn-off over the whole silicon area can be ensured by use of gains lower than those typically specified in manufacturers data sheets. With turn-off gains of less than one, true snubberless performance is possible with no risk to the device
Keywords :
differential amplifiers; driver circuits; field effect transistor circuits; reliability; thyristors; GTO thyristor reliability; controlled avalanching; gate drive circuits; gate turn-off waveforms; linear MOSFET amplifiers; low impedance coaxial gate connections enhance; snubberless performance;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Variable-Speed Drives, 1991., Fourth International Conference on
Conference_Location :
London
Type :
conf
Filename :
114679
Link To Document :
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