Study on the distribution of trap levels in PI by OPO laser

Author

He, Lijuan ; Wang, Dongni ; Cao, Jinglei ; Zhao, Lei ; Wang, Xuan ; Lei, Qingquan

Author_Institution

Harbin Univ. of Sci. & Technol., Harbin, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

167

Lastpage

169

Abstract

In this paper, the photo-stimulated discharge (PSD) current spectra of polyimide (PI) are obtained by the optical parametric oscillator (OPO) laser to characterize the deep space charge traps in the dielectric materials. The result shows that the energy level of charge traps in the PI film is distributed in 3.10~4.10eV, and the main part concentrates in 3.35~3.85eV. These data can provide experimental basis for the further research and improvement on electrical properties of materials.

Keywords

deep levels; dielectric thin films; optical parametric oscillators; polymer films; space charge; charge trap energy level; deep space charge traps; dielectric materials; electrical properties; optical parametric oscillator laser; photostimulated discharge current spectra; polyimide films; Current measurement; Discharges; Films; Laser excitation; Measurement by laser beam; Space charge; optical parametric oscillator; space charge; trap;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615368

Filename

5615368