Title : 
The LIGA technique-A novel concept for microstructures and the combination with Si-technologies by injection molding
         
        
            Author : 
Menz, W. ; Bacher, W. ; Harmening, M. ; Michel, A.
         
        
            Author_Institution : 
Inst. fuer Mikrostrukturtech., Kernforschungszentrum Karlsruhe, Germany
         
        
        
            fDate : 
30 Jan-2 Feb 1991
         
        
        
        
            Abstract : 
The LIGA technique originally developed to fabricate separation nozzles for the enrichment of uranium has been expanded into a universal technology for the fabrication of microstructures with high aspect ratio and free lateral shaping. The LIGA process consists of three basic process steps: deep-etch lithography by means of synchrotron radiation, electroforming, and plastic molding. The choice of materials ranges from plastics (PMMA, POM, PA) to metals (up to now Au, Ni, Cu) and ceramics (ZrO2). These microstructures can be mass-produced by inexpensive injection molding and reaction injection molding processes. Integration with Si technology/int is possible, opening up the potential of novel applications and improving both overall yield and package density
         
        
            Keywords : 
X-ray lithography; electroforming; semiconductor technology; synchrotron radiation; Au; Cu; LIGA technique; Ni; Si technology/int; ZrO2; aspect ratio; ceramics; deep-etch lithography; electroforming; injection molding; lateral shaping; metals; microstructures; package density; plastics; synchrotron radiation; Ceramics; Fabrication; Gold; Injection molding; Inorganic materials; Lithography; Microstructure; Packaging; Plastics; Synchrotron radiation;
         
        
        
        
            Conference_Titel : 
Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
         
        
            Conference_Location : 
Nara
         
        
            Print_ISBN : 
0-87942-641-1
         
        
        
            DOI : 
10.1109/MEMSYS.1991.114771