New algorithm for overlapping cell treatment in hierarchical CAD data/electron beam exposure data conversion

Author

Okubo, Tsuneo ; Watanabe, Takashi ; Wada, Kou

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1990

fDate

24-28 Jun 1990

Firstpage

321

Lastpage

326

Abstract

An electron beam exposure system used for LSI mask making or direct writing for ASICs is considered. In CAD data/electron beam exposure-data conversion, a new algorithm for treating overlapping cells hierarchically is proposed. Geometric transformations, such as resizing, for overlapping cells are performed without referring to other cells by introducing a data marking structure. The conversion time of a 16M DRAM and 70 K-gate LSI circuits becomes as short as 23 and 62 CPU minutes, respectively, using a 12-MIPS computer

Keywords

application specific integrated circuits; circuit CAD; electronic engineering computing; integrated circuit manufacture; large scale integration; 16M DRAM; ASICs; LSI mask making; algorithm; data marking structure; direct writing; geometric transformations; hierarchical CAD data/electron beam exposure data conversion; overlapping cell treatment; resizing; Central Processing Unit; Circuits; Data conversion; Data structures; Design automation; Electron beams; Large scale integration; Proximity effect; Random access memory; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 1990. Proceedings., 27th ACM/IEEE

Conference_Location

Orlando, FL

ISSN

0738-100X

Print_ISBN

0-89791-363-9

Type

conf

DOI

10.1109/DAC.1990.114874

Filename

114874