SBAR filter monolithically integrated with HBT amplifier

Author

Cushman, D. ; Lau, K.F. ; Garber, E.M. ; Mai, K.A. ; Oki, A.K. ; Kobayashi, K.W.

Author_Institution

TRW Electron. Syst. Group, Redondo Beach, CA, USA

fYear

1990

fDate

4-7 Dec 1990

Firstpage

519

Abstract

The authors describe the successful monolithic integration of bulk acoustic filters with gallium arsenide integrated circuits. Data are presented for a filter-amplifier chip with a center frequency of 1023 MHz, a 4 MHz bandwidth, and +14 dB gain. The size of the filter-amplifier chip is 1.6×3.2 mm. The monolithic filter is an SBAR (semiconductor bulk acoustic resonator) stacked crystal filter. The filter was fabricated with sputtered aluminum nitride piezoelectric films. The active circuit is a gallium arsenide HBT amplifier. The amplifier is a two-stage design and has biasing resistors and coupling capacitors on-chip. The integration process for the monolithic SBAR-HBT filter-amplifier is outlined

Keywords

MMIC; acoustic filters; acoustic resonators; application specific integrated circuits; bipolar integrated circuits; crystal filters; crystal resonators; microwave amplifiers; microwave filters; 1023 MHz; 14 dB; 4 MHz; GaAs circuits; HBT amplifier; MMIC; SBAR-HBT filter-amplifier; biasing resistors; bulk acoustic filters; coupling capacitors; filter-amplifier chip; monolithic integration; semiconductor bulk acoustic resonator filter; sputtered AlN piezoelectric films; stacked crystal filter; two-stage design; Active circuits; Aluminum nitride; Bandwidth; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Monolithic integrated circuits; Piezoelectric films; Resonator filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1990. Proceedings., IEEE 1990

Conference_Location

Honolulu, HI

Type

conf

DOI

10.1109/ULTSYM.1990.171419

Filename

171419