Title :
Polysilicon microstructures
Author :
Farooqui, M.M. ; Evans, A.G.R.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
30 Jan-2 Feb 1991
Abstract :
The sacrificial etch technology for fabricating free-standing three-dimensional microstructures in polysilicon has been successfully implemented. A variety of techniques for reducing the intrinsic compressive stress have been employed in fabricating low stress structures. Low-temperature-deposited microcrystalline polysilicon and polysilicon deposited over doped oxide were found to have low intrinsic stress, without additional annealing. A simple technique for obtaining additional compliance in diaphragms is described. Anisotropically etched submicron fibers and plastically deformed polysilicon shells are some of the unusual devices that have been obtained
Keywords :
CVD coatings; etching; integrated circuit technology; micromechanical devices; silicon; 3D microstructures; anisotropically etched submicron fibers; compliance in diaphragms; free-standing three-dimensional microstructures; low intrinsic stress; low stress structures; low temperature deposited microcrystalline intrinsic compressive stress reduction; plastically deformed polysilicon shells; polycrystalline Si; polysilicon; polysilicon deposited over doped oxide; polysilicon microstructures; sacrificial etch technology; Annealing; Bridge circuits; Capacitive sensors; Chemicals; Compressive stress; Computer science; Dielectric substrates; Internal stresses; Microstructure; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Nara
Print_ISBN :
0-87942-641-1
DOI :
10.1109/MEMSYS.1991.114793
