Broad area semiconductor lasers with tailored gain

According to the principle of carrier diffusion, we fabricated an electric pattern high power single quantum well broad area semiconductor laser. The designed devices have special current injection stripe which forms Gaussian-like photon gain laterally. Utilizing this principle, tailored gain lasers exhibiting near single lobe far field patterns were found. The tailored gain lasers emitting at 808 nm with the measured full width at half maximum angle of 4.1°, the maximum continuous wave output power up to 3.4W, and slope efficiency as high as 0.89 W/A were reported. The beam quality of the broad area semiconductor single quantum well laser has been improved obviously by the designed devices.