Title :
An IDDQ sensor circuit for low-voltage ICs
Author_Institution :
Dept. of Electron. & Inf. Eng., Tokyo Metropolitan Univ., Japan
Abstract :
A novel IDDQ sensor circuit with high sensitivity that operates at a low supply voltage is proposed. The circuit does not need an I-V translator but is directly driven by an abnormal IDDQ. The circuit can operate at either 5-V VDD or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-μA abnormal IDDQ at 3.3-V VDD and can reduce the voltage drop and performance penalty of the circuit under test
Keywords :
CMOS digital integrated circuits; electric current measurement; electric sensing devices; integrated circuit testing; logic testing; 16 muA; 3.3 V; 5 V; IDDQ sensor circuit; delay circuit; low-voltage IC; performance penalty; simulation; Circuit faults; Circuit simulation; Circuit testing; Degradation; Electrical fault detection; Fault detection; Low voltage; MOSFET circuits; Power supplies; Sensor phenomena and characterization;
Conference_Titel :
Test Conference, 1997. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-4209-7
DOI :
10.1109/TEST.1997.639709
