Keywords :
Fermi level; MOSFET; arsenic; boron; diffusion; elemental semiconductors; germanium; interstitials; p-n heterojunctions; phosphorus; semiconductor doping; vacancies (crystal); Fermi level; Ge:As; Ge:B; Ge:P; MOSFET; arsenic diffusion; dopant atom diffusion; doubly negatively charged vacancies; drain doping; electron-hole density; forming pairs; germanium; interstitial levels; lattice atoms; phosphorous diffusion; point defects; slow diffusion nature; source-drain doping; source-drain regions; substrate material; ultra-shallow p-n junctions;
