Title :
Film bulk acoustic wave resonator technology
Author :
Krishnaswamy, S.V. ; Rosenbaum, J. ; Horwitz, S. ; Vale, C. ; Moore, R.A.
Author_Institution :
Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
It is demonstrated that completely monolithic two-pole filters can be fabricated on silicon substrates using FBARs (film bulk acoustic resonators) and that these filters have low loss and reasonable bandwidth. A two-pole monolithic ladder filter operating in the 1-1.5 GHz range has been demonstrated. These filters (0.3×0.3×0.02 in) have a bandwidth of 30 MHz at 1 GHz and an insertion loss of about 1 dB. The small size serves to provide good shock and acceleration tolerance. Preliminary results on a stacked FBAR filter operated in high overtone mode show response up to 5.5 GHz. The authors review the development of FBAR technology, including piezoelectric film and membrane materials, fabrication techniques, temperature compensation schemes, and the progress made in processing monolithic filters. Issues relating to integration of FBARs with active circuits and IC processing compatibility are addressed
Keywords :
MMIC; acoustic filters; acoustic resonators; application specific integrated circuits; crystal filters; crystal resonators; ladder networks; microwave filters; piezoelectric thin films; 1 dB; 1 to 1.5 GHz; 30 MHz; 5.5 GHz; IC processing compatibility; MMIC; Si substrates; acceleration tolerance; active circuits; fabrication techniques; film bulk acoustic resonators; high overtone mode; insertion loss; integration; ladder filter; low loss; membrane materials; monolithic two-pole filters; piezoelectric film; shock tolerance; small size; stacked filter; temperature compensation schemes; Acceleration; Acoustic waves; Bandwidth; Electric shock; Film bulk acoustic resonators; Insertion loss; Piezoelectric films; Resonator filters; Silicon; Substrates;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171421
