DocumentCode :
2754249
Title :
Fundamental Mechanisms for Reduction of Leakage Current of Silicon Oxide and Oxynitride through RTP-Induced Phonon-Energy Coupling
Author :
Chen, Zhi ; Guo, Jun ; Ong, Pangleen
Author_Institution :
Dept. of Electr. & Comput. Eng., Kentucky Univ., Lexington, KY
fYear :
2006
fDate :
10-13 Oct. 2006
Firstpage :
111
Lastpage :
115
Abstract :
We study the fundamental mechanisms for dramatic reduction of leakage current of silicon oxide caused by the RTP-induced phonon-energy coupling enhancement (PECE). It is shown that the Si-O bonds are strengthened after RTP and deuterium anneal through characterization of hot-electron degradation of MOS transistors. The Si-0 bonds are strengthened because the breakdown voltage of silicon oxide is increased after RTP. We also designed special pn junctions to examine Si-Si bonds. We found that the breakdown voltage of the silicon substrate is increased by 0.3 V after RTP anneal whereas it remains the same for diodes annealed in furnace with the same parameters as in RTP. The increase in breakdown voltage of silicon is due to its intrinsic properties, i.e. stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of phonon energy from silicon to thin oxide
Keywords :
MOSFET; bonds (chemical); leakage currents; rapid thermal annealing; semiconductor device breakdown; silicon compounds; MOS transistors; RTP; SiO2; SiON; bond strengthening; breakdown voltage; deuterium anneal; hot-electron degradation; intrinsic properties; leakage current reduction; phonon-energy coupling enhancement; special pn junctions; Degradation; Deuterium; Diodes; Furnaces; Infrared spectra; Leakage current; MOSFETs; Phonons; Rapid thermal annealing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
Type :
conf
DOI :
10.1109/RTP.2006.367989
Filename :
4223116
Link To Document :
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