2.0 µm multiple quantum-wells InGaAsSb/AlGaAsSb laser diode operating continuous wave at room temperature

Author

You, Minghui ; Gao, Xin ; Li, Zhan Guo ; Liu, Guojun ; Li, Lin ; Li, Mei ; Zou, Yong Gang ; Wang, Xiaohua ; Bo, Baoxue

Author_Institution

Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

33

Lastpage

35

Abstract

The multiple quantum wells (MQWs) InGaAsSb/AlGaAsSb laser diodes (LDs) with an emission wavelength around 2.0μm were designed and fabricated by molecular beam epitaxy (MBE). The good performance of LD was achieved, with the low threshold current of 225 mA, and the slope efficiency of 0.23 W/A, respectively. The maximum outpower of 16 mW at 500 mA drive current was obtained at room temperature(RT).

Keywords

III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical design techniques; optical fabrication; semiconductor lasers; semiconductor quantum wells; InGaAsSb-AlGaAsSb; continuous wave; current 225 mA; current 500 mA; low threshold current; molecular beam epitaxy; multiple quantum wells laser diode; power 16 mW; slope efficiency; temperature 293 K to 298 K; Diode lasers; Molecular beam epitaxial growth; Monitoring; Quantum well lasers; Substrates; InGaAsSb/AlGaAsSb; MBE; Mid-infrared; multiple; quantum-wells laser diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615419

Filename

5615419