Title :
2.0 µm multiple quantum-wells InGaAsSb/AlGaAsSb laser diode operating continuous wave at room temperature
Author :
You, Minghui ; Gao, Xin ; Li, Zhan Guo ; Liu, Guojun ; Li, Lin ; Li, Mei ; Zou, Yong Gang ; Wang, Xiaohua ; Bo, Baoxue
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fDate :
July 28 2010-Aug. 1 2010
Abstract :
The multiple quantum wells (MQWs) InGaAsSb/AlGaAsSb laser diodes (LDs) with an emission wavelength around 2.0μm were designed and fabricated by molecular beam epitaxy (MBE). The good performance of LD was achieved, with the low threshold current of 225 mA, and the slope efficiency of 0.23 W/A, respectively. The maximum outpower of 16 mW at 500 mA drive current was obtained at room temperature(RT).
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical design techniques; optical fabrication; semiconductor lasers; semiconductor quantum wells; InGaAsSb-AlGaAsSb; continuous wave; current 225 mA; current 500 mA; low threshold current; molecular beam epitaxy; multiple quantum wells laser diode; power 16 mW; slope efficiency; temperature 293 K to 298 K; Diode lasers; Molecular beam epitaxial growth; Monitoring; Quantum well lasers; Substrates; InGaAsSb/AlGaAsSb; MBE; Mid-infrared; multiple; quantum-wells laser diode;
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
DOI :
10.1109/RCSLPLT.2010.5615419
