DocumentCode :
2754262
Title :
Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering
Author :
Harima, Hiroshi
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol.
fYear :
2006
fDate :
10-13 Oct. 2006
Firstpage :
117
Lastpage :
120
Abstract :
Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering
Keywords :
MOSFET; Raman spectra; semiconductor device measurement; semiconductor-metal boundaries; Raman scattering; Si; device manufacturing process; interface interactions; metal-semiconductor interface; metallic electrodes; micrometric scale characterization; nanometric scale characterization; nondestructive characterization; Annealing; Chemical elements; Conductivity; Contact resistance; Magnetic materials; Nickel; Raman scattering; Semiconductor-metal interfaces; Silicides; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
Type :
conf
DOI :
10.1109/RTP.2006.367990
Filename :
4223117
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2754262
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