A study on the thermal reliability of high voltage MOSFET device

In this study, the electrical characteristics of high voltage MOSFET(HV-MOSFET) under high temperature were investigated. And, specific on-resistance, threshold voltage, trans-conductance, drain current of the HV-MOSFET were measured over a temperature range of 300 K les T les 450 K. The results of this study indicate that extended drift region length has a great effect on electrical characteristics, but that is does little effect on temperature dependence. The specific on-resistance increases slightly with temperature. Especially, at high temperature(at 450 K), the specific on-resistance increase about 30% than that in room temperature. And, in high temperature condition (at 400 K), drain current decrease about 30%, Also, transconductance(gm) decreases with temperature.