Title :
Thermal Controllability of High Temperature (>1400°C) Rapid Thermal Oxidation for SiC MOSFET
Author :
Ogata, Seiji ; Oka, Tadashi ; Tsuda, Katsumi ; Nakayama, Toki ; Kosugi, Ryoji
Author_Institution :
ULVAC, Inc., Kanagawa
Abstract :
Effective NO passivation annealing for SiC MOSFET with extreme high temperature (>1400degC) at cold-wall oxidation furnace has been developed by AIST group. For this newly developed process, the thermal distribution and chemical reaction in the reactor are studied by computational numerical analysis. By comparing the experimental process and the simulated results, the spatial distribution of N atom on the wafer is suggested to be the key technology of nitridation process of SiO2/SiC interface
Keywords :
MOSFET; nitridation; numerical analysis; oxidation; rapid thermal annealing; rapid thermal processing; silicon compounds; wide band gap semiconductors; 1400 C; AIST group; MOSFET; SiO2-SiC; chemical reaction; cold-wall oxidation furnace; computational numerical analysis; high temperature rapid thermal oxidation; nitridation process; passivation annealing; thermal controllability; thermal distribution; Chemical analysis; Controllability; Furnaces; MOSFET circuits; Oxidation; Passivation; Rapid thermal annealing; Rapid thermal processing; Silicon carbide; Temperature;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367994
