Raman Study on the Process of SI Advanced Integrated Circuits

Author

Nishibe, S. ; Sasaki, T. ; Harima, H. ; Kisoda, K. ; Yamazaki, T. ; Yoo, W.S.

Author_Institution

Kyoto Inst. of Technol.

fYear

2006

fDate

10-13 Oct. 2006

Firstpage

211

Lastpage

215

Abstract

Precise control of fabrication processing is a key point for future integration technology of Si devices. Reliable characterization of Si wafers at each fabrication process is indispensable. Raman scattering has high-potential as a technique for noncontact and nondestructive characterization which yields valuable information on Si-based materials. Here, a patterned Si wafer for a modern electronic device is characterized by Raman microprobe to study the effect of different processes on residual stress, as well as other physical aspects

Keywords

Raman spectra; Raman spectroscopy; integrated circuit measurement; internal stresses; nondestructive testing; phonons; semiconductor technology; silicon; Raman microprobe; Raman scattering; Raman study; Si; fabrication processing control; integration technology; noncontact characterization; nondestructive characterization; phonon interactions; residual stress; silicon integrated circuits process; silicon wafer characterization; Brillouin scattering; Crystallization; Frequency; Integrated circuit technology; Lattices; Light scattering; Phonons; Raman scattering; Residual stresses; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

1-4244-0648-X

Electronic_ISBN

1-4244-0649-8

Type

conf

DOI

10.1109/RTP.2006.368002

Filename

4223129