UV Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets

Author

Yi-Hsing Liu ; Sheng-Joue Young ; Liang-Wen Ji ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

2033

Lastpage

2037

Abstract

High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ~25 nm and 2.16 μm, respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 V/μm, and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 V/μm and 6616, respectively.

Keywords

II-VI semiconductors; field emission; gallium; nanofabrication; nanostructured materials; semiconductor growth; wide band gap semiconductors; zinc compounds; SiO₂; UV enhanced field emission properties; UV illumination; ZnO:Ga; aqueous solution method; glass substrate; high-density gallium-doped ZnO nanosheets; nanosheet diameter; nanosheet length; size 2.16 mum; turn-ON field; Gallium; Glass; Iron; Nanowires; Substrates; Temperature; Zinc oxide; Gallium (Ga)-doped ZnO; UV enhanced field emitters; UV enhanced field emitters.; nanosheet;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2416730

Filename

7086027