Title :
Impact of NI Layer Thickness and Anneal Time on Nickel Silicide Formation by Rapid Thermal Processing
Author :
Huelsmann, T. ; Niess, J. ; Lerch, W. ; Fursenko, O. ; Bolze, D.
Author_Institution :
Mattson Thermal Products, Dornstadt
Abstract :
The effects of different initial Ni layer thickness and various anneal times during the nickel silicidation process have been investigated as a function of rapid thermal annealing temperature between 200 and 800degC. By means of electrical and optical measurements the Ni silicide phase transformations are explained. Spectroscopic ellipsometry has been used to measure Ni and Ni silicide thickness. An oxide on the Ni layer was found to be generated, if the time between Ni deposition and annealing is not short enough. Also a method to monitor the Ni silicidation process on RTP systems was introduced
Keywords :
ellipsometry; metallisation; nickel compounds; rapid thermal annealing; semiconductor-metal boundaries; thickness measurement; 200 to 800 C; Ni-Si; NiSi; anneal time; electrical measurement; layer thickness; nickel silicidation process; nickel silicide formation; optical measurement; phase transformations; rapid thermal annealing; rapid thermal processing; spectroscopic ellipsometry; Electric variables measurement; Ellipsometry; Nickel; Phase measurement; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Spectroscopy; Temperature;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.368006
