Titanium Silicide Formation: Process Characterization Using Single Wafer Rapid Thermal Furnace System

Author

Garroux, Dominique ; Ouaknine, Michel ; Malik, Igor J. ; Fukada, Takashi ; Odera, Masato ; Ishigaki, Toshikazu ; Ueda, Takeshi ; Yoo, Woo Sik

Author_Institution

Altis Semicond., Corbeil Essonnes

fYear

2006

fDate

10-13 Oct. 2006

Firstpage

255

Lastpage

262

Abstract

Formation of titanium silicide was studied using a "hot wall" single wafer rapid thermal furnace (SRTF) system. Average sheet resistance and uniformity of TiSi₂ films before and after processing, as well as process repeatability were evaluated. We also collected data for annealing of implanted wafers, oxide thickness & uniformity before and after dry and wet oxidation. We use this data to demonstrate process repeatability for anneals in the SRTF system. Comparison with wafers processed with Altis Semiconductor tool of record (TOR) gave some useful information regarding differences between wafers processed in lamp-based RTA and SRTF systems

Keywords

oxidation; rapid thermal annealing; semiconductor technology; sheet materials; titanium compounds; Si; TiSi₂; TiSi₂ films; dry oxidation; hot wall single wafer rapid thermal furnace system; oxide thickness; process characterization; process repeatability; rapid thermal annealing; sheet resistance; titanium silicide formation; wet oxidation; Assembly; Furnaces; Manufacturing processes; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicides; Silicon carbide; Temperature control; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

1-4244-0648-X

Electronic_ISBN

1-4244-0649-8

Type

conf

DOI

10.1109/RTP.2006.368009

Filename

4223136