Manufacture and characteristics analysis of SOI-LDMOSFET

Author

Chen, H.J. ; Chu, J.H. ; Lin, C.I. ; Lin, J.L.

Author_Institution

Huafan Univ., Taipei

fYear

2007

fDate

Oct. 30 2007-Nov. 2 2007

Firstpage

1

Lastpage

4

Abstract

A LDMOSEFT structure on SOI substrate is studied mainly in this paper. This device has good performance in terms of low leakage current, low parasitic capacitance, low conduction power consumption and high switch speed. In this research, current-voltage relationship derivation and electrical characteristics, such as threshold voltage, breakdown voltage, on-resistance, parasitic capacitances, switching characteristics and AC reliability test are presented and discussed.

Keywords

MOSFET; capacitance; leakage currents; power consumption; semiconductor device reliability; silicon-on-insulator; LDMOSEFT structure; SOI substrate; current-voltage relationship derivation; electrical characteristics; low conduction power consumption; low leakage current; low parasitic capacitance; switch speed; Capacitance-voltage characteristics; Conductivity; Integrated circuit modeling; Leakage current; Parasitic capacitance; Pulp manufacturing; Silicon on insulator technology; Substrates; Switches; Threshold voltage; LDMOSFET; SOI; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2007 - 2007 IEEE Region 10 Conference

Conference_Location

Taipei

Print_ISBN

978-1-4244-1272-3

Electronic_ISBN

978-1-4244-1272-3

Type

conf

DOI

10.1109/TENCON.2007.4429032

Filename

4429032