Title :
Manufacture and characteristics analysis of SOI-LDMOSFET
Author :
Chen, H.J. ; Chu, J.H. ; Lin, C.I. ; Lin, J.L.
Author_Institution :
Huafan Univ., Taipei
fDate :
Oct. 30 2007-Nov. 2 2007
Abstract :
A LDMOSEFT structure on SOI substrate is studied mainly in this paper. This device has good performance in terms of low leakage current, low parasitic capacitance, low conduction power consumption and high switch speed. In this research, current-voltage relationship derivation and electrical characteristics, such as threshold voltage, breakdown voltage, on-resistance, parasitic capacitances, switching characteristics and AC reliability test are presented and discussed.
Keywords :
MOSFET; capacitance; leakage currents; power consumption; semiconductor device reliability; silicon-on-insulator; LDMOSEFT structure; SOI substrate; current-voltage relationship derivation; electrical characteristics; low conduction power consumption; low leakage current; low parasitic capacitance; switch speed; Capacitance-voltage characteristics; Conductivity; Integrated circuit modeling; Leakage current; Parasitic capacitance; Pulp manufacturing; Silicon on insulator technology; Substrates; Switches; Threshold voltage; LDMOSFET; SOI; threshold voltage;
Conference_Titel :
TENCON 2007 - 2007 IEEE Region 10 Conference
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1272-3
Electronic_ISBN :
978-1-4244-1272-3
DOI :
10.1109/TENCON.2007.4429032
