A single chip dual-band low noise amplifier

Author

Wang, Shih-Ming ; Chen, Cheng-Chung

Author_Institution

Ind. Technol. Res. Inst., Seoul

fYear

2007

fDate

Oct. 30 2007-Nov. 2 2007

Firstpage

1

Lastpage

4

Abstract

This paper describes a dual-bands low noise amplifier design for WCDMA and WiMAX applications. The low-noise amplifier (LNA) is implemented with the proposed dual-band matching network that consists of a high-pass and low-pass ladder. The LNA is fabricated in 0.5 um enhancement-mode pHEMT (E-mode pHEMT) technology for high linearity and low noise application. The measured noise figures (NF) and insertion gains (S21) are 1.2 dB and 16.1 dB at WCDMA band, 1.45 dB and 15.1 dB at WiMAX band. With 3-V supply voltage and 28.8-mW power consumption, the input third order intercept points (IIP3) are 6.5 dBm and 8.9 dBm for WCDMA and WiMAX, respectively.

Keywords

HEMT integrated circuits; MMIC amplifiers; WiMax; code division multiple access; ladder filters; low noise amplifiers; WCDMA; WiMAX applications; enhancement-mode pHEMT technology; gain 1.2 dB; gain 1.45 dB; gain 15.1 dB; gain 16.1 dB; high-pass ladder; low noise amplifier; low-pass ladder; single chip dual-band amplifier; size 5 mum; voltage 3 V; Dual band; Gain measurement; Linearity; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; PHEMTs; Voltage; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2007 - 2007 IEEE Region 10 Conference

Conference_Location

Taipei

Print_ISBN

978-1-4244-1272-3

Electronic_ISBN

978-1-4244-1272-3

Type

conf

DOI

10.1109/TENCON.2007.4429046

Filename

4429046