Title :
A single chip dual-band low noise amplifier
Author :
Wang, Shih-Ming ; Chen, Cheng-Chung
Author_Institution :
Ind. Technol. Res. Inst., Seoul
fDate :
Oct. 30 2007-Nov. 2 2007
Abstract :
This paper describes a dual-bands low noise amplifier design for WCDMA and WiMAX applications. The low-noise amplifier (LNA) is implemented with the proposed dual-band matching network that consists of a high-pass and low-pass ladder. The LNA is fabricated in 0.5 um enhancement-mode pHEMT (E-mode pHEMT) technology for high linearity and low noise application. The measured noise figures (NF) and insertion gains (S21) are 1.2 dB and 16.1 dB at WCDMA band, 1.45 dB and 15.1 dB at WiMAX band. With 3-V supply voltage and 28.8-mW power consumption, the input third order intercept points (IIP3) are 6.5 dBm and 8.9 dBm for WCDMA and WiMAX, respectively.
Keywords :
HEMT integrated circuits; MMIC amplifiers; WiMax; code division multiple access; ladder filters; low noise amplifiers; WCDMA; WiMAX applications; enhancement-mode pHEMT technology; gain 1.2 dB; gain 1.45 dB; gain 15.1 dB; gain 16.1 dB; high-pass ladder; low noise amplifier; low-pass ladder; single chip dual-band amplifier; size 5 mum; voltage 3 V; Dual band; Gain measurement; Linearity; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; PHEMTs; Voltage; WiMAX;
Conference_Titel :
TENCON 2007 - 2007 IEEE Region 10 Conference
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1272-3
Electronic_ISBN :
978-1-4244-1272-3
DOI :
10.1109/TENCON.2007.4429046
