Title :
Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching
Author :
Koide, Akira ; Sato, Kazuo ; Tanaka, Shinji
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
30 Jan-2 Feb 1991
Abstract :
A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using this program, it is possible to predict changes in the cross-sectional shape of a silicon wafer having arbitrary crystallographic orientation and an initial cross-sectional shape including concave and convex edges. The data base covers the etching temperature range from 40°C to 78°C using a 40% KOH aqueous solution as an etchant. The program calculates the etch profiles step by step with a time increment on a desktop computer
Keywords :
digital simulation; elemental semiconductors; etching; micromechanical devices; silicon; 40 to 78 degC; KOH aqueous solution; Si; concave edges; convex edges; cross-sectional shape; crystallographic orientation; desktop computer; etching temperature; fabrication processes; micromechanical devices; orientation-dependent anisotropic etching; time increment; two-dimensional etch profile; Anisotropic magnetoresistance; Application software; Chemical sensors; Crystallography; Etching; Mechanical variables measurement; Micromechanical devices; Shape; Silicon devices; Temperature;
Conference_Titel :
Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Nara
Print_ISBN :
0-87942-641-1
DOI :
10.1109/MEMSYS.1991.114799
