Title :
Effects of metal properties on MIS/IL silicon solar cells
Author :
Saleh, Mohamed B. ; Soliman, Moataz M. ; Attala, Mohamed E. ; Hafez, Alaa S.
Author_Institution :
Coll. of Eng. Studies & Technol., Arab Acad. for Sci. & Technol., Egypt
Abstract :
Inversion layer silicon solar cells are described. They employ the natural inversion layer occurring at the surface of thermally oxidized p-type silicon as one side of an induced n-p junction. A computer analysis of an induced inversion layer MIS silicon solar cell is described. The analysis simultaneously solves transport equations of the device in one dimension and provided the current components. Taking into consideration all the cell parameters has yielded more accurate values for cell performance. The study of the performance of the MIS/IL solar cells is based on the concept that they are minority carrier non-equilibrium devices. In this paper, we discuss the effects of metal properties, namely, electron negativity and metal work function on cell characteristics. The model is used to obtain the optimum metal properties for high efficiency MIS/IL solar cells
Keywords :
MIS devices; elemental semiconductors; inversion layers; minority carriers; p-n junctions; semiconductor device models; silicon; solar cells; work function; MIS/IL silicon solar cells; Si; cell characteristics; cell parameters; cell performance; computer analysis; current components; electron negativity; induced n-p junction; inversion layer; metal properties; metal work function; minority carrier nonequilibrium devices; thermally oxidized p-type silicon; transport equations; Charge carrier processes; Current density; Educational institutions; Electron mobility; Metal-insulator structures; Photovoltaic cells; Poisson equations; Radiative recombination; Silicon; Spontaneous emission;
Conference_Titel :
Radio Science Conference, 1999. NRSC '99. Proceedings of the Sixteenth National
Conference_Location :
Cairo
Print_ISBN :
977-5031-62-1
DOI :
10.1109/NRSC.1999.760939
